Skip to main content
SpringerLink
Log in

Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT)

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

In this study, a Al 0.3 Ga 0.7 N/GaN high electron mobility transistor (HEMT) structure is grown on a c-oriented sapphire substrate using a metal organic chemical vapor deposition (MOCVD) system. Resistivity (ρ), Hall mobility (μ) and carrier density (n) are measured in 0.01–0.14 T magnetic field range and 25–340 K temperature range. Also, scattering mechanisms effecting electron mobility are discussed. Resistivity analyses are presented by depending on resistivity measurements.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5

Similar content being viewed by others

References

  1. Nakamura, S. (1998) “In: B. GIL (Ed.), III-V Nitride-Based Short-wavelength LEDs et LDs group III nitride semiconductor compounds”, Phys. Appl. Oxf. Sci. Publ. 3916.

  2. T. Paskova, D.A. Hanser, K.R. Evans, GaN Substrates for III-nitride devices. Proc. IEEE 98(7), 1324 (2010)

    Article  Google Scholar 

  3. A. Denis, G. Goglio, G. Demazeau, Gallium nitride bulk crystal growth processes: a review. Materials Sci. Eng. R 50, 167–194 (2006)

    Article  Google Scholar 

  4. S.J. Pearton, GaN and related materials. Gordon Breach Sci. Publ. 2, 11 (1997)

    Google Scholar 

  5. L. Liu, J.H. Edgar, Substrates for gallium nitride epitaxy. Mater. Sci. Eng. R 37, 61–127 (2002)

    Article  Google Scholar 

  6. C. Qian, L. Qun, Y. Ying, Effects of AlGaN interlayer on scattering mechanisms in InAlN/AlGaN/GaN heterostructures”. Acta Physica sinica 68(1), 017301 (2018)

    Google Scholar 

  7. Yurdugül, Ü., “Magnetic and electron transport properties of n-type InSb semiconductor dependent on temperature”, MS Thesis, Gazi Üniversitesi Fen Bilimleri Enstitüsü, Ankara, (2005).

  8. Kasap, M., ‘‘The Temperature and Pressure Dependence of Electron Transport in Plastically Relaxed InxGa1–xAs’’, Doctora thesis, University of Surrey Faculty of Science Department of Physics, Surrey, 24–25 (1993).

  9. Lişesivdin, S., B., “Electron and magnet transport properties of AlGaN/GaN Based High electron mobility Transistors”, Doktora Thesis, Gazi Üniversitesi Fen Bilimleri Enstitüsü, Ankara, (2008).

  10. A. Krost, A. Dadgar, GaN-Based Devices on Si. Physica status solidi (a) 194(2), 361–375 (2002)

    Article  ADS  Google Scholar 

  11. Balkan, N., Arikan, M. C., Gokden, S., Tilak, V., Schaff, B., and Shealy, R. J., “Energy and momentum relaxation of hot electrons in GaN/AlGaN” J. Phys.: Condens. Matter, 14(13): 3457–3468, (2002).

  12. B.K. Ridley, Hot phonons in high-fieldtransport. Semicond. Sci. Technol. 4(12), 1142 (1989)

    Article  ADS  Google Scholar 

  13. D. Zanato et al., Superlatt. Microstruct. 36, 655 (2004)

    Article  Google Scholar 

  14. S. Gokden et al., Semicond. Sci. Technol. 25, 045024 (2010)

    Article  ADS  Google Scholar 

  15. O. Akpinar, A.K. Bilgili, M.K. Ozturk, S. Ozcelik, E. Ozbay, Investigation of structural, optical and electrical properties of Al0.3Ga0.7N/GaN HEMT grown by MOCVD. J. Polytech. 23(3), 687–696 (2020)

    Google Scholar 

Download references

Acknowledgements

This work was supported by Presidency Strategy and Budget Directorate (Grant Number: 2016K121220)

Author information

Authors and Affiliations

  1. Photonics Research Center, Gazi University, Teknikokullar, 06500, Ankara, Turkey

    Ömer Akpınar, Mustafa Kemal Öztürk & Süleyman Özçelik

  2. Physics Department, Gazi University, Teknikokullar, Ankara, 06500, Turkey

    Ahmet Kürşat Bilgili

Authors
  1. Ömer Akpınar
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Ahmet Kürşat Bilgili
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Mustafa Kemal Öztürk
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Süleyman Özçelik
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Ömer Akpınar.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Akpınar, Ö., Bilgili, A.K., Öztürk, M.K. et al. Electron transport properties of Al0.3Ga0.7 N/GaN high electron mobility transistor (HEMT). Appl. Phys. A 126, 623 (2020). https://doi.org/10.1007/s00339-020-03810-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s00339-020-03810-0

Keywords

Search

Navigation