Abstract
The surface displacement of 111-silicon wafers of 0.675 mm and 3.05 mm thickness, respectively, during intense ns laser irradiation is determined on the nm-vertical and ns-time scale using an optimized Michelson interferometer. The surface dynamics is observed below as well as above the melting threshold. We show that the obtained surface expansion below the melting threshold is in good agreement with theoretical heat transfer calculations. Additionally, thickness-dependent bending in the samples is illustrated and the acoustic reflections from the backside of the sample are observed. Maximum thermal displacement at the first expansion plateau is around 6 nm before melting occurs. We show that qualitative agreement between experimental results and simulation above the melting threshold can be established for the first time by taking the phase shift change in the reflection for molten silicon into account.
Similar content being viewed by others
References
V. Dobler, R. Oltra, J.P. Boquillon, M. Mosbacher, J. Boneberg, P. Leiderer, Appl. Phys. A 69, 335 (1999)
T. Geldhauser, F. Ziese, F. Merkt, A. Erbe, J. Boneberg, P. Leiderer, Appl. Phys. A 89, 109 (2007)
E.M. Bringa, A. Caro, Y. Wang, M. Victoria, J.M. McNaney, B.A. Remington, R.F. Smith, B.R. Torralva, H. Van Swygenhoven, Science 309, 1838 (2005)
Y.M. Wang, E.M. Bringa, J.M. McNaney, M. Victoria, A. Caro, A.M. Hodge, R. Smith, B. Torralva, B.A. Remington, C.A. Schuh, H. Jamarkani, M.A. Meyers, Appl. Phys. Lett. 86, (2006)
C.B. Scruby, L.E. Drain, Laser Ultrasonics—Techniques and Applications (Adam Hilger, Bristol, 1990)
G.E. Jellison, H.H. Burke, J. Appl. Phys. 60, 841 (1986)
G.E. Jellison, F.A. Modine, Appl. Phys. Lett. 41, 180 (1982)
D.E. Aspnes, A.A. Studna, E. Kinsbron, Phys. Rev. B 29, 768 (1984)
G.E. Jellison, D.H. Lowndes, Appl. Phys. Lett. 51, 352 (1987)
O. Madelung, Semiconductors: Data Handbook (Springer, Berlin, 2002)
Y.S. Touloukian, C.Y. Ho, Thermophysical Properties of Matter—Thermal Conductivity. Metallic Materials, vol. 1 (IFI/Plenum, New York, 1970)
V.M. Glazov, S.N. Chizhevskaya, N.N. Glagoleva, Liquid Semiconductors (Plenum, New York, 1969)
Y.S. Touloukian, C.Y. Ho, Thermophysical Properties of Matter—Specific Heat. Metallic Materials, vol. 4 (IFI/Plenum, New York, 1970)
Y.S. Touloukian, R.K. Kirby, E.R. Taylor, T.Y.R. Lee, Thermophysical Properties of Matter—Thermal Expansion. Nonmetallic Solids, vol. 13 (IFI/Plenum, New York, 1977)
J. Boneberg, PhD thesis, konstanzer dissertationen 387, Hartung-Gorre, Konstanz, 1993, ISBN 3-89191-694-9
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kneier, F., Geldhauser, T., Leiderer, P. et al. Measurements of the ns-laserpulse induced expansion of (111) silicon below and above the melting threshold on the nanosecond time scale. Appl. Phys. A 105, 25–30 (2011). https://doi.org/10.1007/s00339-011-6528-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-011-6528-4