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High resolution patterning of sapphire by F2-laser ablation

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Abstract

The ablation behavior of single crystalline sapphire with nanosecond laser pulses at 157 nm wavelength is investigated. Ablation rates of about 10 to 100 nm/pulse are obtained at fluences ranging from 1 to 9 J/cm2. At moderate fluences, incubation behavior is observed, i.e. ablation starts after material modification by a number of laser pulses. The ablation can be utilized to fabricate sapphire micro-optics. The capability of creating lenses or gratings on the tip of sapphire fibers is demonstrated. Multilevel diffractive optical elements and high resolution gratings with 1 μm period are fabricated on planar sapphire substrates.

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Correspondence to Markus Wiesner.

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Wiesner, M., Ihlemann, J. High resolution patterning of sapphire by F2-laser ablation. Appl. Phys. A 103, 51–58 (2011). https://doi.org/10.1007/s00339-011-6347-7

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