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Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol–gel method for non-volatile memory

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Abstract

Bi3.15Nd0.85Ti3O12 (BNT) thin films were prepared on Pt/Ti/SiO2/Si substrates by the sol–gel method. The phase composition was detected by XRD, the microstructure was characterized by AFM, and the effect of measuring factors (such as environmental temperature, working frequency, and voltage) on the ferroelectric properties was investigated. The films show the single Bi-layered Aurivillius phase with random orientation. At room temperature, the remanent polarization (2P r) and the coercive field (2E c) are 39.1 μC/cm2 and 160.5 kV/cm, respectively, and a BNT capacitor shows fatigue-free behavior and memory retention. With the decrease of temperature, 2V c increases, J decreases slightly, and the general trend of 2P r is decreased. With the increase of frequency, 2P r declines and 2V c increases.

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Authors and Affiliations

  1. State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, China

    Dongyun Guo, Chuanbin Wang, Qiang Shen & Lianmeng Zhang

  2. Department of Physics, Wuhan University, Wuhan, 430072, China

    Meiya Li & Jun Liu

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  1. Dongyun Guo
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  2. Chuanbin Wang
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  3. Qiang Shen
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  4. Lianmeng Zhang
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  5. Meiya Li
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  6. Jun Liu
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Correspondence to Lianmeng Zhang.

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Guo, D., Wang, C., Shen, Q. et al. Effect of measuring factors on ferroelectric properties of Bi3.15Nd0.85Ti3O12 thin films prepared by sol–gel method for non-volatile memory. Appl. Phys. A 97, 877–881 (2009). https://doi.org/10.1007/s00339-009-5349-1

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  • DOI: https://doi.org/10.1007/s00339-009-5349-1

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