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Ag–N dual-accept doping for the fabrication of p-type ZnO

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Abstract

P-type ZnO was realized by dual-doping with nitrogen and silver via electrostatic-enhanced ultrasonic spray pyrolysis. The structural, electrical, and optical properties were explored by XRD, Hall-effect, and optical transmission spectra. The resistivity of ZnO:(N,Ag) film was found to be 56 Ω cm−1 with the high mobility of 76.1 cm2/V s. Compared with ZnO:Ag film, ZnO:(N,Ag) film exhibited a higher and more stable optical transmittance.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Shanghai University, Shanghai, 200072, China

    Wang Bin, Zhao Yue, Min Jiahua & Sang Wenbin

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  1. Wang Bin
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  2. Zhao Yue
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  3. Min Jiahua
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  4. Sang Wenbin
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Correspondence to Wang Bin.

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Bin, W., Yue, Z., Jiahua, M. et al. Ag–N dual-accept doping for the fabrication of p-type ZnO. Appl. Phys. A 94, 715–718 (2009). https://doi.org/10.1007/s00339-008-5028-7

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  • DOI: https://doi.org/10.1007/s00339-008-5028-7

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