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NH3-assisted growth approach for ZnO films by atmospheric pressure metal-organic chemical vapor deposition

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Abstract

In this paper, we investigated the two effects of a little H2 and NH3 gas on the properties of ZnO films grown by atmospheric pressure metal organic chemical vapor deposition (AP-MOCVD) using deionized water (H2O) and diethylzinc (DEZn) as the O and Zn sources, respectively. Experimental results showed that compared to the effect of a little H2, it could more effectively improve the surface morphology, crystalline structure, and optical quality of ZnO epilayers by adding a little NH3 gas into the growth ambient. Furthermore, by adding a little NH3 gas into the growth ambient, the hydrogen-related D0X1 (I4):3.365 eV peak disappeared in 10 K photoluminescence spectrum of ZnO films, which indicated the elimination of the unintended hydrogen impurity. The result of the Huang–Rhys factor S (0.113) showed that it was effective for reducing the probability of exciton–phonon scattering of ZnO films by adding a little NH3 gas into the growth ambient. The electron mobility of ZnO films were also significantly improved by this method with the mobility of 100 cm2V-1s-1 measured by Hall measurement at room temperature.

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Authors and Affiliations

  1. Education Ministry Engineering Research Center for Luminescence Materials and Devices, Nanchang University, 235 East Nanjing Road, Nanchang, Jiangxi, 330047, P.R. China

    Jiangnan Dai, Fengyi Jiang, Yong Pu, Li Wang, Wenqing Fang & Fan Li

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  1. Jiangnan Dai
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  2. Fengyi Jiang
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  3. Yong Pu
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  4. Li Wang
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  5. Wenqing Fang
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  6. Fan Li
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Correspondence to Fengyi Jiang.

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PACS

71.55.Gs; 81.15.Gh; 78.55.-m; 78.55.Et; 68.55.-a

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Dai, J., Jiang, F., Pu, Y. et al. NH3-assisted growth approach for ZnO films by atmospheric pressure metal-organic chemical vapor deposition. Appl. Phys. A 89, 645–650 (2007). https://doi.org/10.1007/s00339-007-4248-6

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