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Effects of the Ga-doping concentration on the characteristics of Zn0.7Mg0.3O thin films deposited by metal-organic chemical vapor deposition using an ultrasonic nebulization

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Abstract

Ga-doped Zn0.7-xMg0.3O thin films were deposited on glass substrates at 350 °C by metal-organic chemical vapor deposition using an ultrasonic nebulization technique to transport the source precursors, and the effects of the Ga-doping concentration were investigated. The films with Ga-doping concentrations less than 5 mol% grew with [001] preferred orientation perpendicular to the substrate surface and were composed of large crystallites. At Ga content greater than 5 mol%, the films grew with random orientation and very small crystallite size. The charge carrier concentration in the films increased rapidly up to 4 mol% Ga and then decreased gradually with further increases in the Ga-content. The film resistivity decreased with increasing Ga-content up to 4 mol% due mainly to the increase in charge carrier concentration. Then, the resistivity increased gradually with increasing Ga-content due to the decrease in mobility. The lowest resistivity of the Ga-doped Zn0.7-xMg0.3O thin film was 3.8 × 10−1 Ωcm at the Ga doping concentration of 4 mol%. The mean transmittance in the visible range was more than 85% in all films. The optical band gap of the films increased with increasing Ga-doping concentration up to 5 mol% due to the Burstein-Moss effect.

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Authors and Affiliations

  1. Department of Materials Engineering, Keimyung University, 1095 Dalgubeol-daero, Daegu, 704-701, South Korea

    Choon-Ho Lee & Min-Seok Choi

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  1. Choon-Ho Lee
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  2. Min-Seok Choi
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Correspondence to Choon-Ho Lee.

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Lee, CH., Choi, MS. Effects of the Ga-doping concentration on the characteristics of Zn0.7Mg0.3O thin films deposited by metal-organic chemical vapor deposition using an ultrasonic nebulization. J Electroceram 41, 23–27 (2018). https://doi.org/10.1007/s10832-018-0147-9

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  • DOI: https://doi.org/10.1007/s10832-018-0147-9

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