Abstract
The evolution of the gate voltage during the constant current stress of Ta2O5 films grown on silicon exhibits an additional decreasing region, compared to the case of SiO2 films. That phenomenon has been previously attributed to the thickness lowering of the ultrathin SiO2 interfacial layer naturally grown during the Ta2O5 deposition. Based on the previously proposed method of the evolution of the capacity in accumulation with the stress time, a simplified phenomenological model of capacitors in series was developed and employed as a tool for monitoring the degradation of the insulating film. In some cases breakdown events manifested by abrupt changes of the capacity in accumulation were observed, e.g., the case with the voltage on the silicon dioxide films. In other cases, saturation of the capacity in accumulation was detected, indicating continuous degradation of the SiO2 layer till its final destruction. The above effect was not observed in SiO2 films and can be peculiar for Ta2O5/SiO2 or similar stacked layers.
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73.61.-r; 77.22.Jp; 77.55.+f
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Novkovski, N., Atanassova, E. Wear-out and breakdown of rf sputtered Ta2O5 films on silicon. Appl. Phys. A 81, 1455–1458 (2005). https://doi.org/10.1007/s00339-005-3233-1
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DOI: https://doi.org/10.1007/s00339-005-3233-1