Abstract
We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2×1018 cm-3 and the film thickness is in the range of the penetration length of the PL excitation laser.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
Y. Fu, M. Willander, E.L. Ivchenko: Superlattices Microstruct. 77, 255 (2000)
S. Fukushima, T. Obata, N. Otsuka: J. Appl. Phys. 89, 380 (2001)
H.Q. Zheng, K. Radahakrishnan, S.F. Yoon, G.I. Ng: J. Appl. Phys. 87, 7988 (2000)
Y.H. Chen, Z.G. Wang, Z. Yang: J. Appl. Phys. 87, 2923 (2000)
J. Olvera-Hernandez, F. de Anda, H. Navarro-Contreras, V.A. Mishurnyi: J. Cryst. Growth 208, 27 (2000)
R.E. Kroon, J.R. Botha, J.H. Neethling, T.J. Drummond: J. Electron. Mater. 28, 1466 (1999)
Z.F. Li, W. Lu, H.J. Ye, Z.-H. Chen, X-Z. Yuan, H.F. Dou, S.C. Shen: J. Appl. Phys. 86, 2691 (1999)
S. Perkowitz: In Infrared and Millimeter Waves, K.J. Button (Academic Press, NY 1983) pp. 71–125
S. Perkowitz: J. Electron. Mater. 14, 563 (1985)
G. Irmer, V.V. Toporov, B.H. Bairamov, J. Monecke: Phys. Stat. Sol. B 119, 595 (1983)
Z.F. Li, W. Lu, G.S. Huang, J.R. Yang, L. He, S.C. Shen: J. Appl. Phys. 90, 260 (2001)
Y. Fu, K.B. Joelsson, K.J. Grahn, W.-X. Ni, G.V. Hansson, M. Willander: Phy. Rev. B 54, 11317 (1996)
R.M. Sieg, S.A. Ringel: J. Appl. Phys. 80, 448 (1996)
Y. Fu, M. Willander, Z.F. Li, W. Lu: J. Appl. Phys. 89, 5112 (2001)
L. Pavesi, M. Guzzi: J. Appl. Phys. 75, 4779 (1994)
Semiconductors, Group IV Elements and III–V Compounds, O. Madelung (Springer-Verlag, Berlin 1991)
Author information
Authors and Affiliations
Corresponding author
Additional information
PACS
78.20.-e; 78.55.Cr; 78.66.Fd
Rights and permissions
About this article
Cite this article
Fu, Y., Willander, M., Chen, G. et al. Photoluminescence spectra of doped GaAs films. Appl. Phys. A 79, 619–623 (2004). https://doi.org/10.1007/s00339-004-2560-y
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-004-2560-y