Abstract
We have grown heterostructures of BaxSr1-xTiO3(BST)/La0.7Sr0.3MnO3(LSMO) on LaAlO3(LAO) substrates by the pulsed laser deposition method. BST films with x=0.2,0.5,0.7 and 0.8 have been prepared using a novel rotating split-target arrangement. The lattice constant of the BST films is found to vary linearly with Ba/Sr ratio. An excellent cube-on-cube epitaxial relationship of (100)BST||(100)LSMO||(100)LAO has also been obtained. Scanning electron microscopy studies have revealed smooth and crack-free BST films with a uniform grain size of about 100 nm. Dielectric measurements, made with patterned Au top electrodes and conducting LSMO bottom layers, have shown a maximum permittivity of approximately 280 at 5 kHz in BST films with x=0.7. P–E loop analyses of the Ba0.7Sr0.3TiO3 and Ba0.8Sr0.2TiO3 films have yielded remnant polarization values of 1.66 and 1.81μC/cm2, respectively.
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81.15Fg; 68.55Jk; 77.55+f
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Ruckenbauer, V., Hau, F., Lu, S. et al. Characteristics of Ba x Sr 1–x TiO 3 thin films grown by pulsed laser ablation of rotating split targets of BaTiO 3 and SrTiO 3 . Appl. Phys. A 78, 1049–1052 (2004). https://doi.org/10.1007/s00339-003-2154-0
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DOI: https://doi.org/10.1007/s00339-003-2154-0