Abstract
We present a spectroscopic and microscopic characterization of the chemical composition, structure, and morphology of two commercial negative resists using Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). For this purpose, films of a novolak-based resist (ma-N 2400) and hydrogen silsesquioxane (HSQ) are treated under different conditions (temperature, deep ultraviolet (DUV) exposure, CHF3 plasma). Topographic AFM images show that both heating and DUV exposure strongly affect the surface morphology of as-prepared ma-N 2400 resist films. These different treatment conditions also lead to decreasing roughnesses, which indicates structural reorganization. Furthermore, the decrease of the photoactive compound (bisazide) in the ma-N 2400 resist films, observed in FTIR spectra, suggests cross-linking of the resist after CHF3 plasma treatment, heating, or DUV exposure. XPS measurements on different CHF3 plasma-treated surfaces reveal that a structurally homogeneous fluorine-containing polymer is generated that is responsible for an enhanced etch resistance. FTIR measurements of HSQ films show a correlation between the degree of HSQ cross-linking and baking time.
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References
Zell Th (2006) Microelectron Eng 83:624–633
Data sheet of ma-N 2400 negative photoresists. micro resist technology GmbH, Berlin, Germany
Stade F, Heeren A, Fleischer M, Kern DP (2007) Microelectron Eng 84:1589–1592
Häffner M, Heeren A, Fleischer M, Kern DP, Schmidt G, Molenkamp LW (2007) Microelectron Eng 84:937–939
Loboda MJ, Toskey GA (1998) Solid State Technol 41:99–102
Häffner M, Haug A, Heeren A, Fleischer M, Peisert H, Chassé T, Kern DP (2007) J Vac Sci Technol B 25:2045–2048
Häffner M, Heeren A, Haug A, Schuster B-E, Sagar A, Fleischer M, Peisert H, Burghard M, Chassé T, Kern DP (2008) J Vac Sci Technol B 26 Nov/Dec
Liou HC, Pretzer J (1998) Thin Solid Films 335:186–189
Cook RF, Liniger EG (1999) J Electrochem Soc 146:4439–4442
Yang CC, Chen WC (2002) J Mater Chem 12:1138–1141
Technical information data sheet of mercury short arc lamp HBO 350 W/S. Osram
Hesse R, Chassé T, Szargan R (2003) Anal Bioanal Chem 375:856–863
Hartmut S, Buhr G, Vollman H (1982) Angew Chem 94:471–485
Voigt A (1999) PhD thesis, Humboldt University Berlin
Chan C-M, Ko T-M, Hiraoka H (1996) Surf Sci Rep 24:1–54
Lärmer F, Schilp A Patent Nos. DE 42 41 045 (issued December 5, 1992) and US 5,501,893 (issued March 26, 1996)
Beamson G, Briggs D (1992) High resolution XPS of organic polymers: the Scienta ESCA300 database. Wiley, Chichester
Clark DT, Kilcast D, Adams DB, Musgrave WKR (1972) J Electr Spectr Rel Phenom 1:227–250
Loboda MJ, Grove CM, Schneider RF (1998) J Electrochem Soc 145:2861–2863
Haug A, Harbeck S, Dini D, Hanack M, Cook MJ, Peisert H, Chassé T (2005) Appl Surf Sci 252:139–142
Acknowledgements
The authors thank W. Neu for technical support. Funding by Ministerium für Wissenschaft, Forschung und Kunst Baden-Württemberg, AZ 24–7532.23–21.18/1 is gratefully acknowledged.
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Schuster, BE., Haug, A., Häffner, M. et al. Characterization of the morphology and composition of commercial negative resists used for lithographic processes. Anal Bioanal Chem 393, 1899–1905 (2009). https://doi.org/10.1007/s00216-008-2513-y
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DOI: https://doi.org/10.1007/s00216-008-2513-y