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The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist

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Abstract

A study was made of the dependence of the contrast value of a negative electron resist based on hydrogen-silsesquioxane (HSQ) in the process of the development of NaOH–NaCl in an aqueous alkaline-salt solution at various temperatures. When the temperature of the developer rises from 22 to 40°C the contrast increases by 45%. An increase in contrast was also found with a decrease in the developing temperature by 27% to 10°C compared with the developing temperature of 22°C. Thus, a nonmonotonic change in the contrast of the HSQ resist from the temperature of the development was established. Studies of AFM images of test structures in areas where exposure to the HSQ resist was performed demonstrate the phase contrast even in regions with zero resist thickness after development, which indicates a change in the adhesive properties of the surface.

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Funding

The study was carried out under a state task (topic no. 0066-2019-0004) of the Valiev Physicotechnical Institute, Russian Academy of Sciences, of the Ministry of Education and Science of the Russian Federation and partly with the financial support of the Russian Foundation for Basic Research (project no. 19-37-90083).

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Authors and Affiliations

  1. Valiev Institute of Physics and Technology, Russian Academy of Sciences, 117218, Moscow, Russia

    A. A. Tatarintsev, K. V. Rudenko & A. E. Rogozhin

  2. Faculty of Physics, Moscow State University, 119991, Moscow, Russia

    A. A. Tatarintsev & A. E. Ieshkin

  3. AO NIIME Zelenograd, 124460, Moscow, Russia

    A. V. Shishlyannikov

Authors
  1. A. A. Tatarintsev
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  2. A. V. Shishlyannikov
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  3. K. V. Rudenko
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  4. A. E. Rogozhin
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  5. A. E. Ieshkin
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Correspondence to A. A. Tatarintsev.

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Tatarintsev, A.A., Shishlyannikov, A.V., Rudenko, K.V. et al. The Effect of Temperature on the Development of a Contrast HSQ Electronic Resist. Russ Microelectron 49, 151–156 (2020). https://doi.org/10.1134/S1063739720030063

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  • DOI: https://doi.org/10.1134/S1063739720030063

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