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Investigation of transient response on reconfigurable ringFET exposed to heavy-ion radiation strikes using 3D numerical device simulations

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Abstract

This work merges the reconfigurable FET concept and the multigate structure concept, i.e., ringFET to form a new device concept called the reconfigurable ringFET. The DC performance metrics like ON current, OFF current, ION/IOFF ratio, subthreshold slope, threshold voltage, and transconductance are extracted. Reconfigurable ringFETs are examined for their response to heavy-ion radiation using 3D technology computer-aided design simulations, and the device’s sensitive position is determined by the single-event transient analysis on interactions of heavy ions during normal incidence. For an N-type device, it has been found that the source region is the least sensitive, while the intergate length region near the drain is the most sensitive zone. For a P-type device, it has been found that the intergate length region near the drain is the most sensitive, whereas the drain region is the least sensitive zone. The impact of radiation at various angles of incidence is also investigated. It has also been found that the collected charge decreases with increasing angle of incidence.

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Acknowledgements

Sri Sivasubramaniya Nadar College of Engineering in Chennai provided helpful assistance and collaboration throughout this research study, and the authors are grateful for it.

Funding

We are thankful to DAE - Board of Research in Nuclear Sciences (BRNS) for financial assistance to carry out this work.

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Authors and Affiliations

  1. Department of Electrical and Electronics Engineering, Sri Sivasubramaniya Nadar College of Engineering, Kalavakkam, Chennai, 603110, India

    M. Ramya & K. K. Nagarajan

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  1. M. Ramya
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  2. K. K. Nagarajan
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Contributions

Ms. Ramya worked under the supervision of Dr. KKN. The study conception was performed by Dr. KKN. The design and simulation analysis was done by Ms. MR. The final manuscript was read and approved by all authors.

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Correspondence to M. Ramya.

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Ramya, M., Nagarajan, K.K. Investigation of transient response on reconfigurable ringFET exposed to heavy-ion radiation strikes using 3D numerical device simulations. Electr Eng 105, 2687–2701 (2023). https://doi.org/10.1007/s00202-023-01833-3

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  • DOI: https://doi.org/10.1007/s00202-023-01833-3

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