Abstract
Experimentally revealing the nanometric deformation behavior of 3C-SiC is challenging due to its ultra-small feature size for brittle-to-ductile transition. In the present work, we elucidated the nanometric cutting mechanisms of 3C-SiC by performing in situ nanometric cutting experiments under scanning electron microscope (SEM), as well as post-characterization by electron back-scattered diffraction (EBSD) and transmission electron microscopy (TEM). In particular, a new method based on the combination of image processing technology and SEM online observation was proposed to achieve in situ measurement of cutting force with an uncertainty less than 1 mN. Furthermore, the cutting cross-section was characterized by atomic force microscope (AFM) to access the specific cutting energy. The results revealed that the specific cutting energy increase non-linearly with the decrease of cutting depth due to the size effect of cutting tool in nanometric cutting. The high-pressure phase transformation (HPPT) may play the major role in 3C-SiC ductile machining under the parameters of this experiment.
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Acknowledgements
The study is supported by the National Natural Science Foundation of China (No. 51761135106, 51575389), the National Key Research and Development Program of China (2016YFB1102203), the State key laboratory of precision measuring technology and instruments (Pilt1705), the ‘111’ project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (No. B07014), and the Harbin Core Tomorrow Science & Technology Co., Ltd.
Funding
This study was funded by the National Natural Science Foundation of China (No. 51761135106, 51575389), the National Key Research and Development Program of China (2016YFB1102203), and the ‘111’ project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (No. B07014).
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Zongwei Xu contributed to the conception of the study;
Zongwei Xu and Dongyu Tian performed the main part of the experiment;
Zongwei Xu, Junjie Zhang, Alexander Hartmaier, Bing Liu, and Lei Liu contributed significantly to analysis and manuscript preparation;
Zongwei Xu and Dongyu Tian performed the data analyses and wrote the manuscript;
Junjie Zhang, Alexander Hartmaier, Xichun Luo, Le Song, Lei Liu, and Zhanqi Zhou helped perform the analysis with constructive discussions;
Xuesen Zhao and Le Song helped perform part of the experiment.
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Tian, D., Xu, Z., Liu, L. et al. In situ investigation of nanometric cutting of 3C-SiC using scanning electron microscope. Int J Adv Manuf Technol 115, 2299–2312 (2021). https://doi.org/10.1007/s00170-021-07278-x
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DOI: https://doi.org/10.1007/s00170-021-07278-x