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Experimental study on size effect of tool edge and subsurface damage of single crystal silicon in nano-cutting

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Abstract

A method for fabricating a diamond tool with controllable edge radius was proposed. Using diamond tools with different edge radii at a low speed, nano-cutting tests were performed on single crystal silicon using a special instrument with SEM online observation. The chip morphology and deformation coefficient were analyzed to study the size effect of tool edge in the ductile-cut region. Electron back-scattered diffraction and laser micro-Raman spectroscopy were employed to detect subsurface damage in the machined silicon. The results indicated that the cutting-induced amorphous layer thickness is strongly dependent on the depth of cut and tool edge radius. In the beginning, the amorphous damage layer thickness decreases rapidly with the depth of cut, and then it increases gradually with the further increase in the depth of cut. The minimum amorphous damage can be obtained when the depth of cut is comparable to the tool edge radius.

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Acknowledgments

The authors thank the MNMT Lab for the support with the experimental instruments.

Funding

The authors received financial support from the Natural Science Foundation of Tianjin (Grant No. 17JCZDJC38200) and the National Natural Science Foundation of China (Grant No. 51575389).

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Authors and Affiliations

  1. School of Mechanical Engineering, Tianjin University of Commerce, Tianjin, 300134, China

    Bing Liu, Rui Li & Yanshu Liang

  2. State Key Laboratory of Precision Measuring Technology & Instruments, Tianjin University, Tianjin, 300072, China

    Fengzhou Fang & Zongwei Xu

Authors
  1. Bing Liu
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  2. Fengzhou Fang
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  3. Rui Li
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  4. Zongwei Xu
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  5. Yanshu Liang
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Corresponding author

Correspondence to Bing Liu.

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Liu, B., Fang, F., Li, R. et al. Experimental study on size effect of tool edge and subsurface damage of single crystal silicon in nano-cutting. Int J Adv Manuf Technol 98, 1093–1101 (2018). https://doi.org/10.1007/s00170-018-2310-5

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  • DOI: https://doi.org/10.1007/s00170-018-2310-5

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