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Finite element simulation and experimental research on microcutting mechanism of single crystal silicon

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Abstract

Microcutting technology, which has been proven to be an indispensable means for investigating the material removal mechanism, is able to realize the high efficiency processing of brittle materials with an ultrasmooth surface and a low-damage subsurface. In this study, a series of simulations were performed by finite element (FE) method to investigate the microcutting mechanism of the typical semiconductor material, single crystal silicon. The FE cutting models were established in terms of the Johnson–Cook constitutive relation. First, the material removal behavior during the microcutting process was studied. The results indicated that the chip formation was dominated by extrusion rather than shearing action, and both sides of the chips were smooth without any wrinkle or shear band. Then, the cutting force and cutting heat during the microcutting process were analyzed in deep. It was determined that when the cutting characteristic size reduced to less than the tool edge radius, much energy was needed to remove the materials per unit volume. Besides, microcutting experiments were conducted using a specially designed cutting platform in a scanning electron microscope, and the experimental results were observed to be in agreement with the FE simulation results.

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Acknowledgements

The authors thank the MNMT lab for the support with the experimental instruments.

Funding

The authors gratefully acknowledge supports of the National Natural Science Foundation of China (Grant No. 51805371), the Natural Science Foundation of Tianjin, China (Grant No. 18JCQNJC75400), and the Tianjin Municipal Science and Technology Bureale, China (Grant No. 19JCTPJC53300).

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Authors and Affiliations

  1. School of Mechanical Engineering, Tianjin University of Commerce, Tianjin, 300134, China

    Bing Liu, Rui Li, Cheng Chen & Lin Liang

  2. School of Mechanical Engineering, Tianjin University, Tianjin, 300072, China

    Shuwen Li

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  1. Bing Liu
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  2. Shuwen Li
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  3. Rui Li
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  4. Cheng Chen
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Correspondence to Bing Liu.

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Liu, B., Li, S., Li, R. et al. Finite element simulation and experimental research on microcutting mechanism of single crystal silicon. Int J Adv Manuf Technol 110, 909–918 (2020). https://doi.org/10.1007/s00170-020-05938-y

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