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Influence of Noi es and Electrons on the Solubility of Lithium in Boron-Doped Silicon

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Abstract

A theoretical and experimental study has been made of those interactions between holes and electrons which influence the solubilities of donors and acceptors in semiconductors. The major portion of the work concerns the solubility of lithium in silicon doped to varying degrees with boron. This solubility increases with increasing boron content in a manner predicted by theory and exhibits the expected temperature dependence. A qualitative experiment in germanium is described which demonstrates, in accordance with theory, that doping with a donor decreases the solubility of another donor.

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Authors and Affiliations

  1. Bell Telephone Laboratories Inc., Murray Hill, N. J., USA

    Howard Reiss & C. S. Fuller

Authors
  1. Howard Reiss
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  2. C. S. Fuller
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Additional information

Discussion of this paper, TP 4115E, may be sent, 2 copies, to AIME by May 1, 1956. Manuscript, Apr. 6, 1955. New York Meeting, February 1956.

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Reiss, H., Fuller, C.S. Influence of Noi es and Electrons on the Solubility of Lithium in Boron-Doped Silicon. JOM 8, 276–282 (1956). https://doi.org/10.1007/BF03377685

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  • DOI: https://doi.org/10.1007/BF03377685

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