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The progress in MOCVD and MBE in China

  • Condensed Matter
  • Published:
Acta Physica Hungarica

Abstract

The work on metal organic chemical vapour deposition (MOCVD) and molecular beam epitaxy (MBE) in China dates from the early seventies. This paper reviews the recent progress of MOCVD and BME, including the equipment, technique and materials, such as IV, III–V and II–VI compound semiconductors, in a number of Institutes and Universities in China.

The first part describes the design and construction of a fully automatic computer-controlled MOCVD equipment by Shanghai Institute of Metallurgy, Academia Sinica, preparation of SiGaAs/GaAlAs and GaInAs/InP superlattice, GaAs/GaAlAs heterojunction and quantum well structures and HgCdTe/CdTe/GaAs multilayer heterojunction materials and fabrication of photocathode, low noise MESFET and quantum well lasers.

The second part reviews the development of MBE systems in China, preparation of GaAs/Si and CdTe/GaAs heterostructures, GaAlAs/GaAs quantum well, modulating heterostructures and superlattices and the fabrication of multiquantum well (MQW) heterojunction lasers and MQW F-P bistable operated logic devices.

It can be seen that the MOCVD and MBE work in China is of a preliminary nature and only make a little contribution to the field of MOCVD and MBE semiconductors.

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References

  1. Peng Rui-wu, Xi You Jin Shu, Rare Metals,12, 290, 1988.

    Google Scholar 

  2. Peng Rui-wu, Zong Jia-ting, Zhai Qi-gang, Ren Yao-cheng and Ding Young-qing, Proc. of 1987 Natl. Symp. on GaAs and Related Compounds, Beijing, 1987, p. 41.

  3. Liang Bing-wen, Ding Young-qing, Lu Feng-zhen and Peng Rui-wu, Rare Metals,6, 263, 1987.

    Google Scholar 

  4. T. Soga, Y. Takahashi, S. Sakai and M. Umeno, J. Cryst. Growth,68, 169, 1984.

    Article  ADS  Google Scholar 

  5. Ren Yao-cheng, Wang Le and Peng Rui-wu, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 260.

  6. Duan Shi-kun, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 267.

  7. Zhou Tin-ming, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 269.

  8. Ren Yao-cheng, Wei Guang-yi and Peng Rui-wu, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 295.

  9. Du Min-ze, Yuan Jin-shan and Hong Chun-rong, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 271.

  10. M. J. Ludowise, C. B. Coper and R. R. Saxena, J. Electron Materials,10, 1051, 1981.

    Article  ADS  Google Scholar 

  11. M. J. Cherng, H. R. Jen, C. A. Larsen and G. B. Stringfellow, J. Cryst. Growth,77, 408, 1986.

    Article  ADS  Google Scholar 

  12. G. Bougnot, F. Delannoy, A. Foucaran, F. Pascal, F. Roumanille, P. Grosse and J. Bougnot, J. Electrochem. Soc.,135, 1783, 1988.

    Article  Google Scholar 

  13. L. M. Dolginov, D. C. Eliseev, A. N. Lapshin and M. G. Milvidski, Kristall Tech.13, 631, 1978.

    Article  Google Scholar 

  14. J. C. Dewinter, A. M. Pollak, A. K. Srivasta and J. L. Zyskind, J. Electron Mater.,14, 729, 1985.

    Article  ADS  Google Scholar 

  15. Peng Rui-wu, Ding Yong-qing and Ren Yao-cheng, in abstract of “5th Internat. Conf. on MOCVD”, Japan, 1987.

  16. Peng Rui-wu and Ding Yong-qing, Acta Chimica Sinica,42, 125, 1984.

    Google Scholar 

  17. K. Okamoto and T. Imai, Appl. Phys. Lett.,42, 972, 1983.

    Article  ADS  Google Scholar 

  18. Peng Rui-wu and Ding Yong-qing, in abstract of “9th Internat. Conf. on Crystal Growth”, Japan, 1989.

  19. Peng Rui-wu, Ding Yong-qing, Wang Ge-ya and Peng Chen, Presented at “3rd Internat. Conf. on Defect Recognition and Image Processing for Research and Development of Semiconductors”, Japan, 1989.

  20. E. Rauhala, J. Keinonen, K. Rakennus and M. Pessa, Appl. Phys. Lett.,51, 973, 1987.

    Article  ADS  Google Scholar 

  21. M. Oron, A. Raizman, H. Shtrikman and G. Cinader, Appl. Phys. Lett.,52, 1059, 1988.

    Article  ADS  Google Scholar 

  22. J. Giess, J. S. Gough, S. J. G. Irvine, G. W. Blackmore, J. B. Mullin and A. Royle, J. Cryst. Growth,72, 120, 1985.

    Article  ADS  Google Scholar 

  23. P.-Y. Lu, C.-H. Wang, I. M. Williams, S. N. G. Chu and C. M. Stiles, Appl. Phys. Lett.,49, 1372, 1986.

    Article  ADS  Google Scholar 

  24. V. Tarajan, N. R. Tasker, I. B. Bhat and S. K. Ghandhi, J. Material Sciences,17, 479, 1988.

    Google Scholar 

  25. Lu Da-cheng, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 279.

  26. Jian Feng-yi, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 281.

  27. Fan Guang-han, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 277.

  28. Guan Zheng-ping, in extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 280.

  29. See extended abstract of “1st Natl. Symp. on MOCVD”, Anhui, 1989, p. 283–288.

  30. Kong Mei-ying, Sun Diang-bao, Huang Yunheng, Liang Ji-ben, Chen Zong-gui and Li Qi-wang, Rare Metals,6, 26, 1984.

    Google Scholar 

  31. Liang Jiben, Sun Dinghao, Hung Yunheng and Kong Meiying, Chinese Physics,7, 575, 1987.

    Google Scholar 

  32. Liang Jiben, Jiang Desheng, Sun Dianzhao, Chen Zonggui and Kong Meiying, Rare Metals,6, 43, 1987.

    Google Scholar 

  33. Zheng Yiping, Fan Tiwen, Sun Dianzhao, Kong Meiying, Huang Yunheng, Zheng Haiqun, Zhu Shirong, Zang Xiaoqiu and Zhu Zhanping, 2nd Natl. Conf. on Superlattice, Beijing, 1988.

  34. Kong Meiying, Sun Dianzhao, Liang Jiben, Huang Yunheng and Zheng Yiping, J. Electronic Materials,16, 417, 1987.

    Article  ADS  Google Scholar 

  35. Jia Weiyi, Lu Zhidong, Huang Yi, Zhou Junming, Li Yunghang and Wan Yun, Acta Physica Sinica,37, 906, 1988.

    Google Scholar 

  36. Zhang Yonghang, Kong Meiying, Chen Lianghui, Wang Qiming, to be published (1989).

  37. Feng Wei, Hou Hongqi, Zhou Junming, Huang Yi, 2nd Natl Conf. on Superlattice, Beijing, 1988.

  38. Sun Dianzhao, Huang Yunheng, Liang Jiben, Chen Zonggui and Kong Meiying, 3rd Internat. Conf. on MBE, San Francisco, 1984.

  39. Zhou J. M., Huang, Y., Meng Q. H., Cheng W. Q., Wu Y. S., Li Y. K., Yang Z. X., Acta Physica Sinica,35, 269, 1986.

    Google Scholar 

  40. Zheng Haiqun, Kong Meiying, Sun Dianzhao, Liang Jiben, Yan Chunhui, Huang Yunheng and Zhu Shirong, Natl. Conf. on GaAs and Related Comp., Huang Shan, 1989.

  41. Zhen Yiping, Kong Meiying, Sun Dianzhao, Huang Yunheng, 1st Natl. Conf. on Superlattice, Beijing, 1987.

  42. Zhou Junming, Huang Yi, Li Yongkang and Jia Weiyi, Proc. of 4th Internat. Conf. on MBE, 1986, p. 221.

  43. Private communication.

  44. Y. S. Tang, Y. W. Xu, D. S. Jiang, W. H. Zhuang and M. Y. Kong, to be published in Superlattice and Microstructure (1989).

  45. Wu Ying, Chen Ziaojian, Lin Jinting, Chinese J. of Research and Progress of SSE,8, 205, 1988.

  46. Private communication.

  47. To be published in Proc. of Internat. Conf. on Optoelectronic Science and Engineering, Beijing, 1989.

  48. Mo Jian-min, Huang Yi and Zhou Junming, 2nd Natl. Conf. on Superlattice, Beijing, 1988.

  49. Li Ai-zhen, Zheng Yan-lan and Qiu Jiunhua, 2nd Natl. Conf. on Superlattice, Beijing, 1988.

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Authors and Affiliations

  1. Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China

    Peng Rui-wu

  2. Beijing Institute of Semiconductors, Academia Sinica, Beijing, China

    Kong Mei-ying

  3. Changchun Institute of Physics, Academia Sinica, Changchun, China

    Jin Yi-xin

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  1. Peng Rui-wu
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  2. Kong Mei-ying
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  3. Jin Yi-xin
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Rui-wu, P., Mei-ying, K. & Yi-xin, J. The progress in MOCVD and MBE in China. Acta Physica Hungarica 70, 217–230 (1991). https://doi.org/10.1007/BF03156269

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