Abstract
Measurements and calculations of the GaInAsSb phase diagram near 530°C are reported. Epitaxial growth of compositions lattice-matched to GaSb is demonstrated over the range 0 ≤ x ≲ 0.22 before encountering the expected miscibility gap. Photoluminescence measurements yield bandgap energies from 0.73 eV for GaSb down to 0.53 eV at x = 0.22, indicating the potential application of these materials for optoelectronic devices operating at wavelengths between 1.71μm and 2.33μm.
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On leave from the Tata Institute of Fundamental Research, Bombay, India.
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DeWinter, J.C., Pollack, M.A., Srivastava, A.K. et al. Liquid phase epitaxial Ga1-xInxAsySb1-y lattice-matched to (100) GaSb over the 1.71 to 2.33μm wavelength range. J. Electron. Mater. 14, 729–747 (1985). https://doi.org/10.1007/BF02654308
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DOI: https://doi.org/10.1007/BF02654308