Abstract
In this paper, we show that the Meyer-Neldel rule can be satisfactorily explained by the temperature dependence of the fermi level. We argue that the universality of the Meyer-Neldel rule can be explained by the fact that the dangling bond is the dominant defect in amorphous silicon.
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Narasimhan, K.L. Comments on the Meyer-Neldel rule in amorphous semiconductors. Pramana - J Phys 34, 561–563 (1990). https://doi.org/10.1007/BF02846432
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DOI: https://doi.org/10.1007/BF02846432