Abstract
Amorphous silicon (a-Si) thin films were deposited on glass substrate by PECVD, and poly-crystalline silicon (poly-Si) thin films were prepared by aluminum-induced crystallization (AIC). The effects of annealing temperature on the microstructure and morphology were investigated. The AIC poly-Si thin films were characterized by XRD, Raman and SEM. It is found that a-Si thin film has a amorphous structure after annealing at 400°C for 20 min, a-Si films begin to crystallize after annealing at 450°C for 20 min, and the crystallinity of a-Si thin films is enhanced obviously with the increment of annealing temperature.
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Funded by the Open Found of Key Laboratory of Silicate Materials Science and Engineering (Wuhan University of Technology) Ministry of Education (No. SYSJJ2005-12) and Wuhan University of Technology Foundation (2005 XJJ 054)
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Man, X., Donglin, X., Sheng, Y. et al. Fabrication of poly-Si thin film on glass substrate by aluminum-induced crystallization. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 21, 33–35 (2006). https://doi.org/10.1007/BF02840834
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DOI: https://doi.org/10.1007/BF02840834