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Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness

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Abstract

In this work, we will study the crystallization of P type hydrogenated amorphous silicon (a-Si:H) by Aluminum Induced Crystallization technique (CIA) by varying the thickness of the aluminum films. We have deposited a 100 nm thickness of p-type a-Si:H layer on Corning glass substrates using PECVD technique. An aluminum layer with thickness ranging from 10 to 400 nm was thermally evaporated on the a-Si:H surface. The thermal annealing was performed in a conventional furnace at temperature of 550 °C for 4 h in flowing N2 ambient. The study of the crystallization of the Al/a-Si:H/Glass structure according the aluminum thickness was carried out by using Raman spectroscopy, X-rays diffraction and Hall Effect measurements. Raman results reveal the presence of the peaks between 510 and 520 cm−1, which are close to the peak of crystallized Si (about 521 cm−1) proving the crystallization of all samples. The XRD measurements show the presence of the characteristic peaks of the crystalline silicon, thus the a-Si: H (p) layer was effectively crystallized by the AIC method in a short time. Through Hall measurements we found an improvement in electrical properties and an increase in dopant concentration (+ 5.3 1014 to + 2.9 1017 cm2).

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Acknowledgements

This work was supported by Funds National of Research: DGRSDT/MESRS (Algeria) and C.R.T.S.E Center of Research.

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Authors and Affiliations

  1. CRTSE -Division DDCS, 2 Bd Dr Frantz Fanon BP 140 Alger – les sept merveilles, Algies, Algeria

    Faouzi Kezzoula & Hamid Menari

  2. USTHB, Faculté de Physique, Laboratoire de Physique des Matériaux, BP 32 El Alia Bab Ezzouar, 16111, Algiers, Algeria

    Mohamed Kechouane

  3. Institut d’Electronique et de Télécommunication de Rennes, Université de Rennes1, Campus de Beaulieu, F-35042, Rennes Cedex, France

    Tayeb Mohammed-Brahim

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  1. Faouzi Kezzoula
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  2. Mohamed Kechouane
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  3. Tayeb Mohammed-Brahim
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  4. Hamid Menari
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Correspondence to Faouzi Kezzoula.

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Kezzoula, F., Kechouane, M., Mohammed-Brahim, T. et al. Crystallization of P Type Amorphous Silicon (a-Si: H) by AIC Method: Effect of Aluminum Thickness. Silicon 12, 405–411 (2020). https://doi.org/10.1007/s12633-019-00129-1

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  • DOI: https://doi.org/10.1007/s12633-019-00129-1

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