Electrical properties of thermally evaporated tellurium thin films

Abstract

Results of dielectric and conduction properties of vacuum evaporated tellurium (Te) thin film capacitors (Al-Te-Al) have been reported in the frequency range 1–100 kHz at various temperatures (303–423 K). Loss factor (tanδ) which shows a maximum with frequency increases with rise of temperature and tanδ _max shift towards high frequency region. The large values of capacitance and dielectric constant (ɛ′) in the low frequency region indicate the possibility of an interfacial polarization mechanism.I-V characteristics show ohmic, space charge limited (SCLC) and thermionic emission conduction mechanisms to operate at low, intermediate and high voltages respectively. Various transport parameters have been calculated. It has been observed that the Schottky type of conduction is predominant in the high field region and the Schottky barrier height has been determined. The Hall coefficient, Hall mobility and carrier concentration are also discussed.