Abstract
Tellurium has been evaporated in an r.f. glow discharge of oxygen onto negatively-biased glass substrates at room temperature. These tellurium oxide thin films have been used as dielectrics in capacitors. The variations of capacitance, C, and dielectric loss, ε″, with frequency in the range of 0.5 to 30 kHz at various temperatures (300 to 443 K) have been studied. The temperature coefficient of capacitance and the dielectric constant for the material have been evaluated. The ε′' spectrum reveals a loss peak and a loss minimum, both shifting towards higher frequences with increasing temperatures. The maximum in the dissipation factor is explained on the basis of a dipolar relaxation phenomenon. The activation energy for the process has also been evaluated.
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Lakshminarayan, N., Radhakrishnan, M. & Balasubramanian, C. Dielectric studies on tellurium oxide thin films. J Mater Sci 17, 1623–1626 (1982). https://doi.org/10.1007/BF00540787
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DOI: https://doi.org/10.1007/BF00540787