Abstract
Conduction mechanism in anthracene single crystal grown by Bridgman method was carried out. The investigations consisted of dark- and photo-current variation with respect to (i) applied electric field and (ii) temperature. The applied electric field ranged from 0·5 to 2·5 kV/cm and the temperature range was between 300 K and 450 K. Photo and dark current variations with temperature indicate, based on activation energy determination, that a band model can be applied to the conduction process. The band gap is calculated to be 1·6 eV. The band model consists of a recombination centre 0·37 eV above the valence band edge and a trap level 0·55 eV below the conduction band edge to which electrons are first thermo-optically excited and then they are thermally excited into the conduction band.
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Joseph, J.V., Xavier, F.P. Conduction mechanism in anthracene as a function of temperature. Bull Mater Sci 20, 317–323 (1997). https://doi.org/10.1007/BF02745097
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DOI: https://doi.org/10.1007/BF02745097