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a-Si:H/CuInS2 heterojunctions for photovoltaic conversion

  • Proceedings Of The Symposium On Thin Film Science And Technology
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Abstract

Heterojunctions of hydrogenated a-Si films prepared by r.f. sputtering with spraypyrolyzed CuInS2 films have been studied. Capacitance-voltage measurements establish the formation of abrupt heterojunction. The barrier height varies from 0·26 to 0·55 V as the resistivity of CuInS2 film decrease from 1·5 × 103 to 65 Θm. These junctions exhibit photovoltaic behaviour withV oc = 220 mV andI sc = 0·20 mA/cm2.

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Authors and Affiliations

  1. Department of Physics, Indian Institute of Technology, 110016, New Delhi, India

    Satyendra Kumar, A N Tiwari, O S Sastry, D K Pandya & K L Chopra

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  1. Satyendra Kumar
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  2. A N Tiwari
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  3. O S Sastry
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  4. D K Pandya
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  5. K L Chopra
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Kumar, S., Tiwari, A.N., Sastry, O.S. et al. a-Si:H/CuInS2 heterojunctions for photovoltaic conversion. Bull. Mater. Sci. 8, 285–289 (1986). https://doi.org/10.1007/BF02744134

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  • DOI: https://doi.org/10.1007/BF02744134

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