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A Phase Investigation of the Rh-Ga-As System

  • Published:
Journal of Phase Equilibria

Abstract

The Rh- Ga- As solid- state equilibrium phase diagram was determined at 800 °C with the use of powder X- ray diffraction (XRD), electron probe microanalysis (EPMA), and scanning electron microscopy (SEM). No ternary Rh- Ga- As phases were found, and very limited solid solubility was measured in GaAs and the constituent binary Rh- Ga and Rh- As compounds. GaAs, RhGa, and RhAs2 form a three- phase region that dominates the GaAs side of the phase diagram. The existence of this three- phase region confirms previous observations that RhGa and RhAs2 are the stable phases when Rh thin films are completely reacted on GaAs.

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Authors and Affiliations

  1. IBM Storage Systems Products Division Highway, 52 and 37th St, 55901, NW Rochester, MN

    K. J. Schulz

  2. University of Wisconsin-Madison Department of Metallurgical and Mineral Engineering, 1509 University Avenue, 53706, Madison, WI

    O. A. Musbah & Y. A. Chang

Authors
  1. K. J. Schulz
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  2. O. A. Musbah
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  3. Y. A. Chang
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Schulz, K.J., Musbah, O.A. & Chang, Y.A. A Phase Investigation of the Rh-Ga-As System. JPE 12, 10–14 (1991). https://doi.org/10.1007/BF02663665

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