Abstract
The electrical properties of semi-insulating Cr-doped GaAs are quite sensitive to monochromatic light irradiation, and thus photoelectronic data are of great value in elucidating the nature of this material. In this paper we present a theoretical basis for the determination of the photocon-ductivity, photo-Hall, and photomagnetoelectric effects, measure these effects in typical GaAs:Cr crystals, and show how the results lead to useful information about substrate quality.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. C. Look, J. Phys. Chem. Solids316, 1311 (1975).
P. M. Hemenger, Rev. Sci. Instr.44, 698 (1973).
D. C. Look (to be published).
Several useful references for the PC and PME effects include: W. van Roosbroeck, Phys. Rev.101, 1713 (1956), and Phys. Rev.119, 636 1960; R. N. Zitter, Phys. Rev.112, 852 1958; and F. Adduci, A. Cingolani, M. Ferrara, and A. Minafra, J. Appl. Phys.45, 5000 1974.
H. C. Casey, Jr., D. D. Sell, and K. W. Wecht, J. Appl. Phys.46, 250 (1975).
A. L. Lin and R. H. Bube, J. Appl. Phys.47, 1859 (1976).
The SSMS results were obtained from Micro-Trace Analytical Services, Santa Barbara, Calif.
J. Barrera, inProc. of the Fifth Biennial Cornell Elec- trical Engineering Conference (Cornell, Ithaca, 1975) p.135.
Author information
Authors and Affiliations
Additional information
Work performed at the Avionics Laboratory, Wright Patterson AFB, under Contract No.F33615-76-C-1207.
Rights and permissions
About this article
Cite this article
Look, D.C. On the characterization of semi-insulating gaas by hall, photo-hall, photoconductivity, and photomagnetoelectric measurements. J. Electron. Mater. 7, 147–157 (1978). https://doi.org/10.1007/BF02656026
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02656026