Abstract
In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15-μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature (T OP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a T OP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current–voltage (IV) characteristics on test diodes in a MWIR FPA.
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References
A. Fenner Milton, OPTRO 2010, 4th International Symposium on Optronics in Defence and Security, Paris 2010.
W. Schirmacher, R. Wollrab, H. Lutz, T. Schallenberg, J. Wendler, and J. Ziegler, II–VI Workshop 2013, to be published.
J. Wenisch, D. Eich, H. Lutz, T. Schallenberg, R. Wollrab, and J. Ziegler, Proc. SPIE 8353-2Q (2012).
J. Wenisch, D. Eich, H. Lutz, T. Schallenberg, R. Wollrab, and J. Ziegler, J. Electron. Mater. 41, 2828 (2012).
J. Wenisch, H. Bitterlich, M. Bruder, P. Fries, R. Wollrab, J. Wendler, R. Breiter, and J. Ziegler, J. Electron. Mater. 42, 3186 (2013).
S. Krishnamurthy, M.A. Berding, Z.G. Yu, C.H. Swartz, T.H. Myers, D.D. Edwall, and R. DeWames, J. Electron. Mater. 34, 873 (2005).
A. Rogalski, J. Antoszewski, and L. Faraone, J. Appl. Phys. 105, 091101 (2009).
J. Ziegler, D. Eich, M. Mahlein, T. Schallenberg, R. Scheibner, J. Wendler, J. Wenisch, R. Wollrab, V. Daumer, R. Rehm, F. Rutz, and M. Walther, Proc. SPIE, 8012 (2011).
D.G. Seiler, J.R. Lowney, C.L. Littler, and M.R. Loloee, J. Vac. Sci. Technol. A 8 (1990).
G.L. Hansen, J.L. Schmit, and T.N. Casselman, J. Appl. Phys. 53, 7099 (1982).
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Ziegler, J., Wenisch, J., Breiter, R. et al. Improvements of MCT MBE Growth on GaAs. J. Electron. Mater. 43, 2935–2940 (2014). https://doi.org/10.1007/s11664-014-3149-7
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DOI: https://doi.org/10.1007/s11664-014-3149-7