Abstract
A new method for the etching of In, Sn, Pb, Sb, Bi, and Zn films in methane and acetone discharges was examined with respect to various parameters such as electrode temperature, power density, bias, and reaction period. The etching species are assumed to be CH3 radicals forming a volatile metallorganic compound, since etch rates in hydrogen plasmas or argon sputter rates are orders of magnitude lower. Etch rates up to 1600 Å/min could be obtained.
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Haag, C., Suhr, H. Etching of metals by means of organic radicals. Plasma Chem Plasma Process 6, 197–203 (1986). https://doi.org/10.1007/BF00575128
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DOI: https://doi.org/10.1007/BF00575128