Abstract
Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 µC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.
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References
R.L. Seliger, R.L. Kubena, R.D. Olney, J.W. Ward, and V. Wang, J. Vac. Sci. and Technol.16, 1610 (1979).
G. Hanson and B.M. Siegel, J. Vac. Sci. and Technol.16, 1875 (1979).
M. Tamura, S. Shukuri, S. Tachi, T. Ishitani, and H. Tamura, Jpn. J. Appl. Phys. 22, L698 (1983).
E. Miyauchi, H. Arimoto, H. Hashimoto, and T. Utsumi, J. Vac. Sci. and Technol.Bl, 1113 (1983).
Y. Bamba, E. Miyauchi, H. Arimoto, K. Kuramoto, A. Takamori, and H. Hashimoto, Jpn. J. Appl. Phys.22, L650 (1983).
R.L. Kubena, C.L. Anderson, R.L. Seliger, R.A. Juliens, E.H. Stevens, and I. Lagnado, J. Vac. Sci. Technol.19, 916 (1981).
M. Komuro, H. Hiroshima, H. Tanoue, and T. Kanayama, J. Vac. Sci. and Technol.Bl, 985 (1983).
A. Wagner, Solid State Technol.26, 97 (1983).
H. Ryssel, K. Haberger, and H. Kranz, J. Vac. Sci. and Technol.19, 1358 (1981).
W.L. Brown, T. Venkatesan, and A. Wagner, Solid State Technol.24, 60 (1981).
I. Adesida, Nucl. Instr. and Methods 209/210,79 (1983).
L. Karapiperis, Ph.D. Thesis (Cornell University, Ithaca, 1981) unpublished.
E. Miyauchi, H. Hashimoto, and T. Utsumi, Jpn. J. Appl. Phys.22, L225 (1983).
G. Stengl, R. Kaitna, H. Loschner, P. Wolf, and R. Sacher, J. Vac. Sci. and Technol.16, 1883 (1979).
I. Berry, J. Vac. Sci. and Technol. Bl, 1059 (1983).
H. Kuwano, K. Yoshida, and S. Yamazaki, Jpn. J. Appl. Phys.19, L615 (1980).
I. Adesida, J.D. Chinn, L. Rathbun, and E.D. Wolf, J. Vac. Sci. and Technol.21, 666 (1982).
D.M. Tennant, J. Vac. Sci. and Technol.Bl, 494 (1983).
I. Adesida and L. Karapiperis, Radiat. Eff.61, 223 (1982).
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This paper was presented at the 25th Electronic Materials Conference, Burlington, Vermont, June 1983
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Adesida, I., Zhang, M. & Wolf, E.D. Lithography with silicon ions. J. Electron. Mater. 13, 689–701 (1984). https://doi.org/10.1007/BF02653989
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DOI: https://doi.org/10.1007/BF02653989