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Lithography with silicon ions

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Abstract

Some applications of focussed ion beams are discussed with special emphasis on the lithography aspects. Experimental data on the ranges of H+, Be+ and Si++ in polymethylmethacrylate (PMMA) are presented. The sensitivity of PMMA to Si++ ions is measured to be 0.35 µC/cm2. It is shown by replication through a transmission mask that Si++ ions with low to moderate incident energies, such as found in focussed ion beam systems, can be used for submicrometer lithography in single and multi-layer resist systems.

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This paper was presented at the 25th Electronic Materials Conference, Burlington, Vermont, June 1983

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Adesida, I., Zhang, M. & Wolf, E.D. Lithography with silicon ions. J. Electron. Mater. 13, 689–701 (1984). https://doi.org/10.1007/BF02653989

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  • DOI: https://doi.org/10.1007/BF02653989

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