Abstract
Different ion species deliver a different material sputtering yield and implantation depth, thus enabling focused ion beam (FIB) fabrication for diverse applications. Using newly developed FIB milling with double charged \(\hbox {Au}^{2+}\) and \(\hbox {Si}^{2+}\) ions, fabrication has been carried out on Au-sputtered films to define arrays of densely packed nanoparticles supporting optical extinction peaks at visible-IR wavelengths determined by the size, shape, and proximity of nanoparticles. Results are qualitatively compared with \(\hbox {Ga}^{+}\) milling. A possibility to use such ion implantation to tailor the etching rate of silicon is also demonstrated.
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Acknowledgments
We acknowledge support by ARC Linkage LP120100161 and Discovery DP130101205, DP120102980 grants. SJ acknowledge a startup funding of Nanotechnology facility by Swinburne University of Technology.
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Seniutinas, G., Balčytis, A., Nishijima, Y. et al. Ion beam lithography with gold and silicon ions. Appl. Phys. A 122, 383 (2016). https://doi.org/10.1007/s00339-016-9866-4
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DOI: https://doi.org/10.1007/s00339-016-9866-4