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Diffusion of zinc into gaas through Al0.3Ga00.7As

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Abstract

The diffusion of zinc into GaAs, Al0.3Ga0.7As and Al0.3Ga0.7As/GaAs single heterostructures have been studied. The depth of the diffusion front is found to be proportional to the square root of the diffusion time, [t]1/2, and for single heterostructures the Al0.3Ga0.7As layer thickness,d 1 modifies this relationship through decreasing the junction depth byd 1 multiplied by a constant. It is shown that this relationship can be used for predicting diffusion fronts in double heterostructures.

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Authors and Affiliations

  1. Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, P.O. Box 150, Cheongyangni Seoul, Korea

    Hoi-Jun Yoo & Young-Se Kwon

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  1. Hoi-Jun Yoo
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  2. Young-Se Kwon
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Yoo, HJ., Kwon, YS. Diffusion of zinc into gaas through Al0.3Ga00.7As. J. Electron. Mater. 17, 337–339 (1988). https://doi.org/10.1007/BF02652115

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  • DOI: https://doi.org/10.1007/BF02652115

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