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Three-dimensional simulation of impurity diffusion in thin-film diffusion barriers

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Abstract

Three-dimensional (3D) simulation of combined lattice and grain-boundary diffusion of impurities in thin-film diffusion barriers for eemiconductor device metallizations is performed. Calculated results of impurity concentration profiles demonstrate quantitatively an obvious underestimation of the frequently used two-dimensional (2D) analysis with respect to the influence of film geometry and grain-boundary diffusion coefficient. As for the average concentration at the backside of diffusion barriers, approximately a factor of two difference between the 2D and 3D simulation results is found over an interesting range of times and grain size structures. Graphs for predicting the effectiveness of diffusion barriers are presented with several normalized parameters associated with position and time. Particular application examples of aluminum diffusion in titanium nitride films justify the use of this material as an effective diffusion barrier in silicon microelectronic devices.

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Author notes

  1. Xiang Gui

    Present address: Reliability Physics Laboratory, Department of Electronic Engineering, Beijing Polytechnic University, 100022, Beijing, China

Authors and Affiliations

  1. Department of Electrical Engineering, University of Alberta, T6G 2G7, Edmonton, Alberta, Canada

    Xiang Gui, Steven K. Dew & Michael J. Brett

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  1. Xiang Gui
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  2. Steven K. Dew
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  3. Michael J. Brett
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Gui, X., Dew, S.K. & Brett, M.J. Three-dimensional simulation of impurity diffusion in thin-film diffusion barriers. J. Electron. Mater. 23, 1309–1314 (1994). https://doi.org/10.1007/BF02649896

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  • DOI: https://doi.org/10.1007/BF02649896

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