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Raman scattering as a probe of the superconducting proximity effect

  • Plenary and Invited Papers
  • Superconductivity
  • Published:
Czechoslovak Journal of Physics Aims and scope

Abstract

Temperature-dependent Raman spectroscopy is used to investigate the effect of superconductivity on the near-surface electronic structure of a semiconductor in good electrical contact with a superconductor. The light scattering is performed through a high-quality thin (60–100Å) film of Nb, grown directly ontoin-situ Ar+-etched (100)-n+InAs. Below Tc, the LO mode, associated with the surface charge accumulation layer in the InAs, is enhanced by ∼40% in comparison with the nearby L_bulk phonon mode. This change, reversible upon temperature cycling, is observed only when the Nb is in good electrical contact with the InAs. Preliminary results show a similar effect on NbN/InAs. Our results constitute the first optical detection of the superconducting proximity effect.

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Authors and Affiliations

  1. Department of Physics and the Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, IL, USA

    L. H. Greene, I. V. Roshchin, A. C. Abeyta, G. Kuchler & W. L. Feldmann

  2. Department of Chemistry and the Materials Research Laboratory, University of Illinois at Urbana-Champaign, 61801, Urbana, IL, USA

    J. F. Dorsten, T. A. Tanzer & P. W. Bohn

Authors
  1. L. H. Greene
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  2. J. F. Dorsten
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  3. I. V. Roshchin
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  4. A. C. Abeyta
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  5. T. A. Tanzer
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  6. G. Kuchler
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  7. W. L. Feldmann
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  8. P. W. Bohn
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Additional information

Support acknowledged by: The Department of Energy through the Materials Research Laboratory # DE-FG02-91-ER45439

Support acknowledged by: The Office of Naval Research #N00014-93-1-1168.

Support acknowledged by: The Fannie and John Hertz Foundation

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Greene, L.H., Dorsten, J.F., Roshchin, I.V. et al. Raman scattering as a probe of the superconducting proximity effect. Czech J Phys 46 (Suppl 6), 3115–3122 (1996). https://doi.org/10.1007/BF02548118

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