Abstract
The application of the ionic microanalyzer developed bySlodzian andCastaing and commercialized by CAMECA, to the determination of the depth profiles of an impurity in different materials is described; the materials chosen for this study were boron-doped substrates of silicon and thin silica films. A description of the device, the problems encountered and the modifications made are given in conjunction with a survey of the results obtained.
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Blanchard, B., Hilleret, N. & Quoirin, J.B. Application of ionic microanalysis to the determination of boron depth profiles in silicon and silica. J. Radioanal. Chem. 12, 85–94 (1972). https://doi.org/10.1007/BF02520978
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DOI: https://doi.org/10.1007/BF02520978