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The transport phenomena of pure and doped p-type ZnSb

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The electrical conductivity, the Hall effect and the thermoelectric power in thec andb crystallo-graphic directions as a function of temperature on pure and doped ZnSb single crystals with hole conductivity were studied.

The anisotropy of the hole mobility was explained on the basis of the anisotropy of the effective mass of holes in the crystallographic directions and the assumption of isotropic relaxation time. A model of the ZnSb valency band with two equivalent extremes was proposed which made it possible to explain the studied transport phenomena.

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Author notes

  1. L. Mlnaříková

    Present address: Tesla Rožnov, Rožnov pod Radhoštěm, Czechoslovakia

  2. A. Tříska

    Present address: Czechosl. Acad. Sci., Institute of Solid State Physics, Cukrovarnická 10, Praha 6, Czechoslovakia

Authors and Affiliations

  1. Faculty of Nuclear and Physical Engineering, Prague, Břehová 7, Praha 1, Czechoslovakia

    L. Mlnaříková & A. Tříska

  2. Institute of Solid State Physics, Czechosl. Acad. Sci., Prague, Cukrovarnická 10, Praha 6, Czechoslovakia

    L. Štourač

Authors
  1. L. Mlnaříková
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  2. A. Tříska
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  3. L. Štourač
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Additional information

The authors thank Mrs. V. Míšková for preparing the ZnSb single crystals, Mr. J. Kašpar for the crystallographic orientation and Mrs. J. Trepešová for her help in the experimental work.

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Mlnaříková, L., Tříska, A. & Štourač, L. The transport phenomena of pure and doped p-type ZnSb. Czech J Phys 20, 63–72 (1970). https://doi.org/10.1007/BF01698108

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  • DOI: https://doi.org/10.1007/BF01698108

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