Abstract
A method is described for investigating inhomogeneities in silicon single crystals which is based on the change in conductivity of the sample when the surface is illuminated. The relationship between the changes in photoelectric conductivity and the resistivity of the illuminated place, the sensitivity and resolving power of the method is discussed.
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References
Gallas M. et al.: Research Report čKD-NLP-TZ-405, Praha 1964.
Fistul V. I., OrŽevskij O. P.: Zav. lab.11 (1963), 1327.
Smith R. A.: Semiconductors, Cambridge Univ. Press 1959, 195.
Tauc J.: Czech. J. Phys.5 (1955), 176.
Frank H.: Czech. J. Phys.6 (1956), 433.
Trousil Z.: Czech. J. Phys.6 (1956), 96.
Bajev I. A., Valjaško E. G.: Fiz. tverd. tela 6 (1964), 6.
Milevskij L. S.: Kristallografija6 (1961), 249.
Thiessen K., Hornung H.: Phys. Stat. Sol.2 (1962), 1158.
Moss T.: Optical Properties of Semiconductors, Butterworth, London 1959.
Klimov B. N.: Fiz. tverd. tela6 (1964), 1356.
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Gallas, M., Kopešťanský, J. & Kyslík, V. The investigation of inhomogeneities in silicon single crystals by the method of photoelectric conductivity. Czech J Phys 16, 583–589 (1966). https://doi.org/10.1007/BF01695155
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DOI: https://doi.org/10.1007/BF01695155