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Dislocations in GaAs single crystals grown by the Czochralski method

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Czechoslovak Journal of Physics B Aims and scope

Abstract

The influence was studied of growth conditions on the dislocation density in gallium arsenide single crystals grown by the Czochralski method from a gallium-enriched melt. Etching in a solution of 1 part cone. HNO3 and 2 parts H2O served to determine the dislocation density across and along a single crystal. The dislocation density along the crystal was found to depend mainly on the angle of crystal diameter increase.

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Authors and Affiliations

  1. Popov Research Institute of Radiocommunications, Prague, Novodvorská 994, Praha 4, Czechoslovakia

    L. Pekárek

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  1. L. Pekárek
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Pekárek, L. Dislocations in GaAs single crystals grown by the Czochralski method. Czech J Phys 18, 1172–1176 (1968). https://doi.org/10.1007/BF01690021

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  • DOI: https://doi.org/10.1007/BF01690021

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