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Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method

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Abstract

The influence of the deviation of seed orientation from the [100] direction on the formation of a dislocation structure of gallium arsenide single crystals grown by the Czochralski method has been revealed. The intensive multiplication of dislocations and formation of a block structure occur at deviation by an angle of more than 3° in the region that is radially shifted to one of crystal sides. The linear density of dislocations in the walls changes from 1 × 104 cm–1 in low-angle boundaries to 6 × 104 cm–1 in subboundaries.

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Authors and Affiliations

  1. State Institute of Rare Metals “Giredmet”, Moscow, 119017, Russia

    I. B. Parfenteva, B. V. Pugachev, V. F. Pavlov, C. N. Knyazev & T. G. Yugova

  2. Institute for Nuclear Research, Russian Academy of Sciences, Moscow, 117312, Russia

    Yu. P. Kozlova

Authors
  1. I. B. Parfenteva
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  2. B. V. Pugachev
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  3. V. F. Pavlov
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  4. Yu. P. Kozlova
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  5. C. N. Knyazev
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  6. T. G. Yugova
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Corresponding author

Correspondence to I. B. Parfenteva.

Additional information

Original Russian Text © I.B. Parfenteva, B.V. Pugachev, V.F. Pavlov, Yu.P. Kozlova, C.N. Knyazev, T.G. Yugova, 2017, published in Kristallografiya, 2017, Vol. 62, No. 2, pp. 259–263.

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Parfenteva, I.B., Pugachev, B.V., Pavlov, V.F. et al. Specific features of the formation of dislocation structure in gallium arsenide single crystals obtained by the Czochralski method. Crystallogr. Rep. 62, 275–278 (2017). https://doi.org/10.1134/S1063774517020201

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  • DOI: https://doi.org/10.1134/S1063774517020201

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