Abstract
Combined experimental and numerical techniques for determining the temperature dependence of reflectivity of basic semiconductors are analyzed. The method for determination of the reflectivity dependence of liquid semiconductors under pulsed laser irradiation on temperature developed earlier by the authors is modified for the case of solid semiconductors. The results obtained by the time-resolved reflectivity measurement technique together with the known temperature dependencies of the refraction index and the extinction coefficient for the cw probe laser and the room-temperature data for the reflectivity at the frequency of the primary pulsed laser beam are the input parameters of this method. The method itself consists in matching the experimental and computed values of the maximum reflectivity of cw probe laser in dependence on the energy density of the laser pulse and a least-squares fitting procedure. The method is verified on experimental data for the XeCl excimer laser irradiation of Si( 100), givingR s=0.590±0.005+(4.5±0.5)× 10−5(T−293) for the reflectivity of crystalline silicon, which is in good agreement with experimental measurements done by other investigators. In addition, numerical test and error analyses of both the method presented here and the previous method proposed for liquid semiconductors are described and the accuracy and error limits of both methods are discussed.
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Černý, R., Cháb, V. & Přikryl, P. Application of combined experimental and numerical techniques in determining the temperature dependence of reflectivity of semiconductors. Int J Thermophys 17, 527–533 (1996). https://doi.org/10.1007/BF01443409
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DOI: https://doi.org/10.1007/BF01443409