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Highly resolved EUV beam-foil spectra of silicon

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Zeitschrift für Physik A Atoms and Nuclei

Abstract

Spectra of foil-excited ions at tandem energies in the EUV region show many unclassified lines. In order to provide a basis for term analysis, high resolution spectra of Si are taken using a ruled 600 l/mm grating in 3rd diffraction order and two holographic gratings of 1,200 l/mm resp. 3,600 l/mm in first diffraction order. With the latter grating the resolution power of a 2.2 m grazing-incidence monochromator is sufficient to measure fine-structure splittings of inter-shell transitions of O VI–O VIII and Si X–Si XII in the wavelength rangeλ < 20 nm. The performance of the gratings is demonstrated.

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We thank the accelerator staff for technical help in providing the Si-beam and U. Beyer for his craftsmanship in constructing the chamber. The grant of the monochromator and the gratings by the Deutsche Forschungsgemeinschaft is gratefully acknowledged.

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Träbert, E., Heckmann, P.H. & Buttlar, H.v. Highly resolved EUV beam-foil spectra of silicon. Z Physik A 290, 7–12 (1979). https://doi.org/10.1007/BF01408473

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  • DOI: https://doi.org/10.1007/BF01408473

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