Abstract
The combinationN(0)I 2 (N(0)-electronic density of states at the Fermi level,I 2-electron-phonon coupling constant) is calculated in the tight-binding approximation for the δ2 band of V3Si. In this model the density of states can be very high even when strong interchain coupling is present. It is found thatI 2 is almost insensitive to changes in the interchain coupling, and that a significant increase inN(0)I 2 of this model can be achieved only for low occupation numbers of the δ2 band.
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Work supported by a grant from the National Council for Research and Development, Israel and KfK (Kernforschungszentrum, Karlsruhe, FRG)
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Entin-Wohlman, O., Weger, M. Effect of high density of states in the presence of interchain coupling on the transition temperature. Z. Physik B - Condensed Matter 42, 119–123 (1981). https://doi.org/10.1007/BF01319545
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DOI: https://doi.org/10.1007/BF01319545