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Self interstitial trapping at Hf impurities in Niobium

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Zeitschrift für Physik B Condensed Matter

Abstract

After electron irradiation at ∼ 15 K of Niobium doped with181Hf the trapping of defects at the Hf impurities was observed by means of the perturbed angular correlation method. The results are interpreted as the formation of Hf-Nb mixed dumbbells which are formed at ∼ 5 K and are stable up to ∼ 80 K.

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Roitzheim, R.D., Vianden, R. Self interstitial trapping at Hf impurities in Niobium. Z. Physik B - Condensed Matter 83, 71–74 (1991). https://doi.org/10.1007/BF01314399

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  • DOI: https://doi.org/10.1007/BF01314399

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