Abstract
The expression for free carrier Faraday rotation θ and for ellipticity Δ, as the function of the applied parallel static electric field\(\mathop {E_0 }\limits_ \to \) and static magnetic field\(\mathop {B_0 }\limits_ \to \) for a given value of wave angular frequency and electron concentration N0, are obtained and theoretically analyzed with the aid of one-dimensional linearized wave theory and Kane's non-parabolic isotropic dispersion law. It is shown that the maximum Faraday rotation occurs near the cyclotron resonance condition, which can be expressed as\(\chi \omega = \omega _{ce} \), where\(\chi = 1{1 \mathord{\left/ {\vphantom {1 {\sqrt {1 - ({{v_0 } \mathord{\left/ {\vphantom {{v_0 } {v_c }}} \right. \kern-\nulldelimiterspace} {v_c }})^2 } }}} \right. \kern-\nulldelimiterspace} {\sqrt {1 - ({{v_0 } \mathord{\left/ {\vphantom {{v_0 } {v_c }}} \right. \kern-\nulldelimiterspace} {v_c }})^2 } }}\),\(v_c = \sqrt {{{\varepsilon _g } \mathord{\left/ {\vphantom {{\varepsilon _g } {2m}}} \right. \kern-\nulldelimiterspace} {2m}}} *\), and\(\omega _{ce} = ({{eB_0 } \mathord{\left/ {\vphantom {{eB_0 } {m*}}} \right. \kern-\nulldelimiterspace} {m*}})\). Here m* and e denote the effective mass and charge of electron, respectively. ɛg is the forbidden bandgap of semiconductor. v0 is the carrier drift velocity, which is a non-linear function of E0 in high field condition. A possibility of a simple way of determining the non-linear “v0 vs E0” characteristics of semiconductors by the measurement of Faraday rotation is also discussed.
Similar content being viewed by others
References
M. Shimura, N. Takeuchi, and T. Yajima, Jap. J. Appl. Phys.9, 1334 (1970).
T. O. Poehler and C. H. Wang, Phys. Rev. B6, 1483 (1972).
J. K. Furdyna, Appl. Opt.6, 675 (1967).
D. J. White, J. Appl. Phys.39, 5083 (1968).
V. Gulyaev, JETP Lett.1, 81 (1965).
A. V. Subashiev, Sov. Phys.-Solid State7, 751 (1965).
M. S. Sodha, S. K. Sharma, and P. K. Dubey, J. Appl. Phys.42, 2400 (1971).
O. Kane, J. Phys. Chem. Solids1, 249 (1957).
A. M. Kalmykov, N. Ya. Kotsarenko, and S. V. Koshevaya, Radio Eng. Electron. Phys.21, 83 (1976).
Z. I. Kiryashina, B. N. Klimov, V. A. Ivanchenko, and G. Y. Naumenko, Sov. Phys.-Semicond.9, 1353 (1976).
F. G. Bass and V. A. Pogrebnyak, Sov. Phys.-Solid State14, 1518 (1972).
H. C. Hsieh, Phys. Rev. B7, 4160 (1972).
E. M. Conwell,High Field Transport in Semiconductors, Academic Press, New York, 1967, p. 197.
K. Seeger,Semiconductor Physics, Springer-Verlag, Wien, 1973, p. 205.
B. Donovan and T. Medcalf, Br. J. Appl. Phys.15, 1139 (1964).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Hsieh, H.C. Influence of a strong longitudinal static electric field on free carrier faraday effect in an n-type InSb at room temperature at submillimeter wave frequencies. Int J Infrared Milli Waves 2, 131–147 (1981). https://doi.org/10.1007/BF01007477
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF01007477