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The temperature dependence of the conductivity and thermal emf due to multiphonon hopping in disordered semiconductors

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Abstract

Using transport theory, we studied the temperature dependence of the static conductivity and of the thermal emf due to multiphonon hopping in disordered semiconductors. In the low-temperature region when T <ω m (ω m is the maximum phonon frequency), the temperature dependences of the conductivity and the thermal emf are the same as when single-phonon hopping is dominant. At higher temperatures (T ≳ω m), the hopping conductivity and thermal emf are characterized by a slower dependence on reciprocal temperature than in the low-temperature region.

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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.2, pp.42–47, February, 1976.

The author is to V. L. Bonch-Bruevich and A. G. Mironov for discussing this work.

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Zvyagin, I.P. The temperature dependence of the conductivity and thermal emf due to multiphonon hopping in disordered semiconductors. Soviet Physics Journal 19, 168–171 (1976). https://doi.org/10.1007/BF00942863

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  • DOI: https://doi.org/10.1007/BF00942863

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