Abstract
Using transport theory, we studied the temperature dependence of the static conductivity and of the thermal emf due to multiphonon hopping in disordered semiconductors. In the low-temperature region when T <ω m (ω m is the maximum phonon frequency), the temperature dependences of the conductivity and the thermal emf are the same as when single-phonon hopping is dominant. At higher temperatures (T ≳ω m), the hopping conductivity and thermal emf are characterized by a slower dependence on reciprocal temperature than in the low-temperature region.
Similar content being viewed by others
Literature cited
V. Ambegaokar, B. I. Halperin, and J. S. Langer, Phys. Rev.,B4, 2612 (1971).
I. P. Zvyagin, Vestnik MGU, Ser. Fiz. Astr.,656 (1974).
I. P. Zvyagin, Izv. Vyssh. Uchebn. Zaved., Fiz. (in press).
Yu. E. Perlin, Usp. Fiz. Nauk,80, 553 (1963).
I. P. Zvyagin, Phys. Stat. Sol. (b),58, 443 (1973).
V. V. Kosarev, Fiz. Tekhn. Poluprovodn.,8, 1378 (1974).
I. Kubelik and A. Třiska, Czech. J. Phys.,B22, 506 (1972).
Author information
Authors and Affiliations
Additional information
Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No.2, pp.42–47, February, 1976.
The author is to V. L. Bonch-Bruevich and A. G. Mironov for discussing this work.
Rights and permissions
About this article
Cite this article
Zvyagin, I.P. The temperature dependence of the conductivity and thermal emf due to multiphonon hopping in disordered semiconductors. Soviet Physics Journal 19, 168–171 (1976). https://doi.org/10.1007/BF00942863
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF00942863