Electrical properties of p-type ZnGeP₂ irradiated by H⁺ ions

Abstract

The properties of p-type ZnGeP₂ [p₀=(5–10)·10¹⁰ cm⁻³, σ₀=(2−5)·10⁻⁷ (Ω·cm)⁻¹], irradiated with H⁺ ions [E=5 MeV, T_irr=300 K, D=(1·10¹²−1.7·10¹⁶) cm⁻²] are studied. An increase in the resistivity (to gr_max ∼- 5·10¹¹ Ω·cm) and subsequent reduction in ρ for large currents of H⁺ ions (ρ ∼- 9·10⁸ Ω·cm for D ∼- 1.7·10¹⁶ cm⁻²), is observed in irradiated crystals. The resistivity ρ of irradiated p-type ZnGeP₂ is found to be very sensitive to hydrostatic pressure [(4–5)·10⁻⁵ bar⁻¹]. The annealing of radiation defects in the temperature interval (20–600) °C is examined.