Abstract
ZnS crystals grown form the vapor phase and ZnS/(001)GaAs epitaxial structures grown by metalorganic vapor phase epitaxy are studied by transmission electron microscopy after in situ irradiation in an electron microscope at an electron energy of 400 keV and intensity of (1–4) × 1019 electrons/cm2 s. It is shown that irradiation leads to the formation of small (2.5–45 nm) dislocation loops with a density of 1.4 × 1011 cm–2, as well as voids and new phase inclusions ≤10 nm in size. Using the moire fringe contrast analysis, these inclusions were identified as ZnO and ZnO2.
Similar content being viewed by others
References
Yu. Yu. Loginov, P. Brown, and K. Durose, The Regularities of Structural Defect Formation in Semiconductors II–VI (Logos, Moscow, 2003) [in Russian].
V. V. Kozlovski, A. A. Lebedev, E. V. Bogdanova, and N. V. Seredova, Semiconductors 49 (9), 1163 (2015).
L. Fedina, A. Gutakovskii, A. Aseev, J. Van Landuyt, and J. Vanhellemont, Phys. Status Solidi A 171, 147 (1999).
O. G. Grushka, V. T. Maslyuk, S. M. Chupyra, O. M.Myslyuk, S. V. Bilichuk, and I. I. Zabolotskiy, Semiconductors 46 (3), 312 (2012).
S. Lavagne, C. Levade, and G. Vanderschaeve, Mater. Sci. Eng., B 128, 1 (2006).
M. Heuken, J. Cryst. Growth 146, 570 (1995).
M. Hirata and M. Kiritani, Physica B + C (Amsterdam) 116, 616 (1983).
K. Nakai, C. Kinoshita, Y. Muroo, and S. Katajima, Philos. Mag. A 48, 215 (1983).
K. Urban, Phys. Status Solidi A 56, 157 (1979).
V. M. Lazarenko, Yu. M. Platov, and M. I. Pletnev, Fiz. Met. Metalloved. 50, 164 (1989).
H. Abe, T. Ishizaki, F. Li, S. Kano, Y. Li, Y. Satoh, T. Nagase, and H. Yasuda, Mater. Trans. 55, 423 (2014).
P. D. Brown, Yu. Yu. Loginov, W. M. Stobbs, and C. J. Humphreys, Phys. Solid State 38 (1), 160 (1996).
Yu. Yu. Loginov and P. D. Brown, Phys. Status Solidi A 132, 323 (1992).
Y. Y. Loginov, P. D. Brown, and C. J. Humphreys, Microsc. Semicond. Mater. 146, 431 (1995).
P. Hirsch, A. Howie, R. Nicholson, D. Pashley, and M. Whelan, Electron Microscopy of Thin Crystals (Butterworths, London, 1965; Mir, Moscow, 1967).
N. Thangaraj and B. Wessels, J. Appl. Phys. 67, 1535 (1990).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © Yu.Yu. Loginov, A.V. Bril’kov, A.V. Mozzherin, 2016, published in Fizika Tverdogo Tela, 2016, Vol. 58, No. 12, pp. 2380–2383.
Rights and permissions
About this article
Cite this article
Loginov, Y.Y., Bril’kov, A.V. & Mozzherin, A.V. Electron microscopy study of the structural defect formation in ZnS under irradiation by electrons with energy of 400 keV. Phys. Solid State 58, 2468–2471 (2016). https://doi.org/10.1134/S1063783416120179
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1063783416120179