Results of investigations are presented of the THz spectra of the refractive index n(v) and of the extinction coefficient k(v) for ZnGeP2 single crystals with different degrees of technological treatment – after growth by the vertical Bridgman technique, after heat treatment at temperatures above the Debye temperature for the highest-frequency phonons, and after modification of the single-crystal properties under irradiation by fast electrons (~4 MeV).
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References
G. Kh. Kitaeva, Laser Phys. Lett., 5, No. 8, 559–576 (2008).
M. Bettini and A. Miller, Phys. Status Solidi (b), 66, No. 2, 579–586 (1974).
A. Miller, G. D. Holah, and W. C. Clark, J. Phys. Chem. Solids, 35, No. 6, 685–693 (1974).
A. S. Poplavnoi and V. G. Tjuterev, J. Phys., 36, C3/169–C3/176 (1975).
S. V. Chuchupal, E. C. Zhukov, O. E. Porodinkov, et al., Uchenye Zap. Fiz. Fakult., 5, No. 13, 50–53 (2013).
S. V. Chuchupal, G. A. Komandin, E. S. Zhukov, et al., Fiz. Tverd. Tela, 56, No. 7, 1338–1344 (2014).
V. V. Voitsekhovskii, A. A. Volkov, G. A. Komandin, and Yu. A. Shakir, Fiz. Tverd. Tela, 37, No. 9, 2199–2202 (1995).
Y. Yu. Peter and Manuel Cardona, Fundamentals of Semiconductor Physics [Russian translation], Fizmatlit, Moscow (2002).
G. A. Verozubova, A. I. Gribenyukov, and Yu. P. Mironov, Neorgan. Mater., 43, No. 10, 1164–1169 (2007).
M. M. Filippov, V. A. Kochegurov, Yu. V. Babushkin, et al., Izv. Tomsk. Politekhn. Univ., 318, No. 2, 89–92 (2011).
V. S. Grigorueva, V. D. Prochukhan, Yu. V. Rud, and A. A. Yakovenko, Phys. Status Solidi A, 17, No. 1, k69–k74 (1973).
B. I. Shklovskii and A. L. Èfros, Electronic Properties of Doped Semiconductors [in Russian], Nauka, Moscow (1979).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 134–137, November, 2017.
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Gribenyukov, A.I., Dorozhkin, K.V., Morozov, A.N. et al. Influence of After-Growth Treatments on the Optical Parameters of Teraherz ZnGeP2 Crystals. Russ Phys J 60, 2000–2003 (2018). https://doi.org/10.1007/s11182-018-1314-9
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DOI: https://doi.org/10.1007/s11182-018-1314-9