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Scattering theory of electrons on impurities in compensated semiconductors

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Abstract

In this paper we study the temperature behavior of the electron mobility in n-type compensated semiconductors, caused by scattering on neutral, ionized, and dipole impurity centers. With increased temperature, neutral impurity atoms and paired oppositely charged donor-acceptor dipole scattering impurity centers transform into separate ionic scattering centers. These transformations of scattering centers take place at various temperatures. We find that the mobility caused by electron scattering on separate impurity ions does not change with temperature monotonically — there appear two minima under certain conditions.

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Authors and Affiliations

  1. Tbilisi State University, USSR

    V. G. Dzhakeli & Z. S. Kachlishvili

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  1. V. G. Dzhakeli
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  2. Z. S. Kachlishvili
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 106–109, October, 1987.

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Dzhakeli, V.G., Kachlishvili, Z.S. Scattering theory of electrons on impurities in compensated semiconductors. Soviet Physics Journal 30, 898–901 (1987). https://doi.org/10.1007/BF00897264

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  • DOI: https://doi.org/10.1007/BF00897264

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